Defects produced by silicon ion implantation in n-silicon near Si-SiO2 interface

Defect levels and continuous background of surface states density (SSD) arising when implanting silicon ions through silicon oxide and n type silicon near the Si-SiO2 boundary have been investigated with the volt-farad characteristic method. Metal-dielectric-semiconductor structures have been obtained with thermal oxidation of n type silicon grown with the Crochralski method. Silicon oxide thickness constituted approximately 110 nm. 120 keV 30Si+ ions were implanted. Impurity distribution maximum in silicon was near the Si-SiO2 interface. Irradiation was performed at 1011, 3x1011, 1012, 3x1012, 1013 ion/cm2 doses. Isochronous annealing was carried out in argon atmosphere during 20 min in the temperature range from room to 520 deg C. Dose dependences for defect quantities have been obtained and the isochronous annealing of some defects and continuous SSD background has been investigated. The results were compared with the data for p type silicon obtained earlier