Published 2001
| Version v1
Miscellaneous
Open
Silicon doping by phosphorus by installation without mass separator
Creators
- 1. NII Fiziki pri Rostovskom Gosuniversitete, Rostov-na-Donu (Russian Federation)
Description
no abstract available
Files
34049217.pdf
Files
(107.8 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:b440fc8be495bb6d03389717d274919a
|
107.8 kB | Preview Download |
System files
(3.9 kB)
| Name | Size | Download all |
|---|
Additional details
Additional titles
- Original title (Russian)
- Легирование кремния фосфором на установке без масс-сепаратора
Publishing Information
- Publisher
- MGU
- Imprint Place
- Moscow (Russian Federation)
- Imprint Title
- Theses of reports of 31. International conference on physics of interaction of charged particles with crystals
- Imprint Pagination
- 160 p.
- Journal Page Range
- p. 138
- Report number
- INIS-RU--463
Conference
- Title
- 31. International conference on physics of interaction of charged particles with crystals
- Original Conference Title
- 31. Mezhdunarodnaya konferentsiya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
- Dates
- 28-30 May 2001
- Place
- Moscow (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 34049217
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference
- Descriptors DEI
- ANNEALING; CHLORINE IONS; CRYSTAL DOPING; ELECTRIC CONDUCTIVITY; ION BEAMS; ION IMPLANTATION; ION SOURCES; PHOSPHORUS IONS; RADIATION DOSES; SILICON
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; DOSES; ELECTRICAL PROPERTIES; ELEMENTS; HEAT TREATMENTS; IONS; PHYSICAL PROPERTIES; SEMIMETALS
Optional Information
- Notes
- 2 refs. Imprint:Tezisy dokladov 31. Mezhdunarodnoj konferentsii po fizike vzaimodejstviya zaryazhennykh chastits s kristallami