Interaction of nickel with InP as a function of annealing time and temperature

Solid state reactions of thin Ni layers with <100> InP have been studied by Auger electron spectroscopy, x-ray diffraction, Nomarski optical and scanning electron microscopy. Annealing for 30 and 60 minutes at 2500C caused a uniform distribution of In and P to occur in the Ni layer. Phase separation into a Ni/sub 2/P layer near the substrate and a Ni-In layer near the surface but covered with unreacted Ni occurred after annealing at 2500C for 90 minutes and at 3000C for 10 to 60 minutes. For annealing temperatures above 4000C the entire Ni layer reacts with P and the In diffuses to the air-film interface