Published August 2004 | Version v1
Journal article

Effect of nonstoichiometric disorder on the transport properties of Nd2-xCexCuO4+δ single crystal films

Description

The effect of doping and nonstoichiometric disordering on the anisotropy of resistivity of Nd2-xCexCuO4+δ single crystal films (x=0.12; 0.15; 0.17) with (0 0 1) and (11-bar0) orientations was investigated. We have found that the increase in the nonstoichiometric disorder leads to the growth of resistivity and to the change in the temperature dependence of the in-plane resistivity from ρab(T)∼T2 to ρab(T)∼exp(T/T0)-1/2. For most stoichiometric reduced films the conduction mechanism appears to be different between ab- and c-directions: a combination of in-plane metallic (dρab/dT>0) and out-of-plane nonmetallic (dρc/dT<0) behavior is a real evidence of the 2D-character of the system investigated. The crossover from 2D to 3D was demonstrated to take place with increasing nonstoichiometric disorder

Additional details

Identifiers

DOI
10.1016/j.physc.2004.02.107;
PII
S0921453404002862;

Publishing Information

Journal Title
Physica. C, Superconductivity
Journal Volume
408-410
Journal Issue
3-4
Journal Page Range
p. 372-373
ISSN
0921-4534
CODEN
PHYCE6

Conference

Title
International conference on materials and mechanisms of superconductivity and high temperature superconductors
Acronym
7. M2SRIO
Dates
25-30 May 2003
Place
Rio de Janeiro (Brazil)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
36059464
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANISOTROPY; CERIUM COMPOUNDS; CONCENTRATION RATIO; CUPRATES; ELECTRIC CONDUCTIVITY; MONOCRYSTALS; NEODYMIUM COMPOUNDS; ORIENTATION; STOICHIOMETRY; SUPERCONDUCTING FILMS; TEMPERATURE DEPENDENCE
Descriptors DEC
COPPER COMPOUNDS; CRYSTALS; ELECTRICAL PROPERTIES; FILMS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RARE EARTH COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Copyright
Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.