Published June 2018 | Version v1
Journal article

Study of inelastic nuclear interactions of 400 GeV/c protons in bent silicon crystals for beam steering purposes

  • 1. CERN, European Organization for Nuclear Research, Geneva (Switzerland)
  • 2. Imperial College, London (United Kingdom)
  • 3. Sapienza Univ. Roma, Dipartimento di Fisica, Rome (Italy)
  • 4. INFN Sezione di Roma, Rome (Italy)
  • 5. Universite Paris Sud Orsay, Laboratoire de l'Accelerateur Lineaire (LAL), Orsay (France)
  • 6. Taras Shevchenko National University of Kyiv (TSNUK), Kiev (Ukraine)
  • 7. INFN Sezione di Ferrara, Ferrara (Italy)
  • 8. Universita di Ferrara, Dipartimento di Fisica e Scienze della Terra (Italy)
  • 9. INFN, Laboratori Nazionali di Frascati, Frascati, Rome (Italy)
  • 10. INFN Sezione di Napoli, Naples (Italy)
  • 11. Complesso Universitario di Monte Sant'Angelo, Naples (Italy)
  • 12. NRC Kurchatov Institute-IHEP, Protvino (Russian Federation)
  • 13. Joint Institute for Nuclear Research, Dubna (Russian Federation)
  • 14. CERN, European Organization for Nuclear Research, Geneva 23 (Switzerland)
  • 15. Petersburg Nuclear Physics Institute in National Research Centre ''Kurchatov Institute'', Gatchina (Russian Federation)

Description

Inelastic nuclear interaction probability of 400 GeV/c protons interacting with bent silicon crystals was investigated, in particular for both types of crystals installed at the CERN Large Hadron Collider for beam collimation purposes. In comparison to amorphous scattering interaction, in planar channeling this probability is ∝ 36% for the quasi-mosaic type (planes (111)), and ∝ 27% for the strip type (planes (110)). Moreover, the absolute inelastic nuclear interaction probability in the axial channeling orientation, along the left angle 110 right angle axis, was estimated for the first time, finding a value of 0.6% for a crystal 2 mm long along the beam direction, with a bending angle of 55 μrad. This value is more than two times lower with respect to the planar channeling orientation of the same crystal, and increases with the vertical angular misalignment. Finally, the correlation between the inelastic nuclear interaction probability in the planar channeling and the silicon crystal curvature is reported. (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1140/epjc/s10052-018-5985-8

Additional details

Publishing Information

Journal Title
European Physical Journal. C, Particles and Fields (Online)
Journal Volume
78
Journal Issue
6
Journal Page Range
p. 1-8
ISSN
1434-6052