Published November 2008 | Version v1
Journal article Metadata-only

Study on radiation hardened power MOSFET

Creators

  • 1. Institute of Microelectronics in Chinese Academy of Sciences, Beijing (China)

Description

A kind of radiation hardened power MOSFET is presented in this paper, which total ionization dose level and single event hardened capabilities can reach the forefront of the world comparing with similar products in the foreign countries. Furthermore, the mechanism of SEB, SEGR and TID are investigated. In addition, the radiation hardened methods of power MOSFET are introduced. (authors)

Additional details

Publishing Information

Journal Title
Nuclear Electronics and Detection Technology
Journal Volume
28
Journal Issue
6
Journal Page Range
p. 1167-1170
ISSN
0258-0934

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
41073337
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
IONIZING RADIATIONS; MOSFET; PARAMETRIC ANALYSIS; PHYSICAL RADIATION EFFECTS; SPACE
Descriptors DEC
FIELD EFFECT TRANSISTORS; MOS TRANSISTORS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; TRANSISTORS

Optional Information

Notes
4 figs., 8 refs.