Effect of the bias electric field on the spectral distribution of the photodielectric effect in the Schottky-barrier structures based on the cadmium-zinc telluride crystals

Spectral dependences of effective values of the real and imaginary parts of the low-frequency permittivity of the Cd1-xZnxTe crystals (x=0.12-0.16) with the Schottky barrier fabricated on the surface are measured. It is found that the boundary wavelengths of the characteristic portions of the measured dependences represented in the complex plane correspond to energies of photons, which cause the radical variations in the state of negatively charged and electrically neutral localized acceptor states. The variations in the energy spectrum of the localized states, which are determined by the magnitude and polarity of the electric bias applied to the Shottky barrier, are found