Phase, current, absorbance, and photoluminescence of double and triple metal ion-doped synthetic and salmon DNA thin films
Creators
- 1. Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419 (Korea, Republic of)
- 2. Department of Physics, Sungkyunkwan University, Suwon 16419 (Korea, Republic of)
- 3. Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103 (Korea, Republic of)
Description
We fabricated synthetic double-crossover (DX) DNA lattices and natural salmon DNA (SDNA) thin films, doped with 3 combinations of double divalent metal ions (M2+)-doped groups (Co2+–Ni2+, Cu2+–Co2+, and Cu2+–Ni2+) and single combination of a triple M2+-doped group (Cu2+–Ni2+–Co2+) at various concentrations of M2+ ([M2+]). We evaluated the optimum concentration of M2+ ([M2+]O) (the phase of M2+-doped DX DNA lattices changed from crystalline (up to ([M2+]O) to amorphous (above [M2+]O)) and measured the current, absorbance, and photoluminescent characteristics of multiple M2+-doped SDNA thin films. Phase transitions (visualized in phase diagrams theoretically as well as experimentally) from crystalline to amorphous for double (Co2+–Ni2+, Cu2+–Co2+, and Cu2+–Ni2+) and triple (Cu2+–Ni2+–Co2+) dopings occurred between 0.8 mM and 1.0 mM of Ni2+ at a fixed 0.5 mM of Co2+, between 0.6 mM and 0.8 mM of Co2+ at a fixed 3.0 mM of Cu2+, between 0.6 mM and 0.8 mM of Ni2+ at a fixed 3.0 mM of Cu2+, and between 0.6 mM and 0.8 mM of Co2+ at fixed 2.0 mM of Cu2+ and 0.8 mM of Ni2+, respectively. The overall behavior of the current and photoluminescence showed increments as increasing [M2+] up to [M2+]O, then decrements with further increasing [M2+]. On the other hand, absorbance at 260 nm showed the opposite behavior. Multiple M2+-doped DNA thin films can be used in specific devices and sensors with enhanced optoelectric characteristics and tunable multi-functionalities. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6528/aa879bAdditional details
Identifiers
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 28
- Journal Issue
- 40
- Journal Page Range
- [9 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 50042855
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- AUGMENTATION; COBALT IONS; CONCENTRATION RATIO; COPPER IONS; DNA; DOPED MATERIALS; NICKEL IONS; PHASE DIAGRAMS; PHASE TRANSFORMATIONS; PHOTOLUMINESCENCE; SENSORS; THIN FILMS
- Descriptors DEC
- CHARGED PARTICLES; DIAGRAMS; DIMENSIONLESS NUMBERS; EMISSION; FILMS; INFORMATION; IONS; LUMINESCENCE; MATERIALS; NUCLEIC ACIDS; ORGANIC COMPOUNDS; PHOTON EMISSION