Published 2005
| Version v1
Miscellaneous
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Spark plasma sintering of SiC and ZrC
Creators
- 1. CEMES-CNRS, 29 rue Jeanne Marvig BP94347 31055 Toulouse Cx 4 (France)
- 2. CEA Saclay, DRT/DTEN/S3ME/LTMEx, 91191 Gif-sur-Yvette (France)
Description
Spark plasma sintering a relative new technique allows sintering material powders in a reduced time compared to formal process of densification. In order to analyse densification mechanisms and to compare with hot isostatic pressing technique, pellets of silicon carbide and zirconium carbide were sintered by HIP and by SPS from 1750 to 1950 deg. C, with different pressures (50 to 75 MPa) and various holding times (0 to 10 min). Their densities were determined and their microstructures were SEM analysed. (authors)
Availability note (English)
Available from INIS in electronic formFiles
37022027.pdf
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Additional details
Publishing Information
- Imprint Pagination
- 4 p.
- Report number
- INIS-FR--4124
Conference
- Title
- 4. international conference on science, technology and applications of sintering
- Acronym
- Sintering '05
- Dates
- 29 Aug - 1 Sep 2005
- Place
- Grenoble (France)
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 37022027
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DENSITY; ELECTRIC SPARKS; HOT PRESSING; MICROSTRUCTURE; PELLETS; PLASMA; POWDERS; PRESSURE RANGE MEGA PA 10-100; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDES; SINTERING; TEMPERATURE RANGE 1000-4000 K; ZIRCONIUM CARBIDES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; ELECTRIC DISCHARGES; ELECTRON MICROSCOPY; FABRICATION; MATERIALS WORKING; MICROSCOPY; PHYSICAL PROPERTIES; PRESSING; PRESSURE RANGE; PRESSURE RANGE MEGA PA; SILICON COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS
Optional Information
- Notes
- 10 refs., 4 figs., 1 tab.
- Funding organization
- This work was funded by the joint research program 'ISMIR' between CEA and CNRS (France)