Published May 21, 2013 | Version v1
Journal article

Controlled synthesis of buried delta-layers of Ag nanocrystals for near-field plasmonic effects on free surfaces

  • 1. Groupe Nanomat-CEMES-CNRS and Université de Toulouse, 29 rue Jeanne Marvig, BP 94347, F-31055 Toulouse Cedex 4 (France)
  • 2. Institute for Interdisciplinary Research in Bio-Nano-Sciences, and Faculty of Physics, Babes-Bolyai University, 42 T. Laurian, 400271 Cluj-Napoca (Romania)
  • 3. InESS-CNRS and Université de Strasbourg, 23 rue du Loess, F-67037 Strasbourg (France)

Description

We report on the shallow synthesis by low energy ion implantation of delta-layers of Ag nanocrystals in SiO2 at few nanometers under its free surface. Transmission electron microscopy observations, ballistic simulations, and reflectance measurements are coupled to define the conditions for which the synthesis is fully controlled and when, on the contrary, this control is lost. We show that low dose implantation leads to the formation of a well-defined single plane of nanocrystals, while for larger doses, sputtering and diffusion effects limit the control of the size, position, and volume amount of these nanocrystals. This paper provides the experimental evidence of the incorporated dose saturation predicted in the literature when implanting metal ions at high doses in glass matrices. Its consequences on the particle population and the plasmonic optical response of the composite layers are carefully analyzed. We show here that this saturation phenomenon is underestimated in standard simulation predictions due to diffusion of metal atoms towards the surface and nanocrystal nucleation during the implantation process.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
113
Journal Issue
19
Journal Page Range
p. 193505-193505.7
ISSN
0021-8979
CODEN
JAPIAU

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44117365
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
DEPOSITION; DIFFUSION; GLASS; ION IMPLANTATION; LAYERS; NANOSTRUCTURES; NUCLEATION; RADIATION DOSES; SATURATION; SILICON OXIDES; SILVER; SPUTTERING; SURFACES; SYNTHESIS; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
CHALCOGENIDES; DOSES; ELECTRON MICROSCOPY; ELEMENTS; METALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; TRANSITION ELEMENTS

Optional Information

Notes
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