High resolution Z-contrast imaging and lattice location analysis of dopants in ion-implanted silicon

Two new electron microscopy techniques have been developed which greatly extend the capabilities for the micro-characterization of semiconductors. The first is a technique for the direct imaging of dopants in semiconductors, whether or not they are in solution, using Z-contrast, and the second is a technique for determining the substantial fraction of dopant. Both techniques are capable of nanometer spatial resolution and allow the detailed study of dopant segregation, precipitation, and clustering effects. 8 references, 8 figures