Published November 2015
| Version v1
Journal article
On a semiconductor laser with a p–n tunnel junction with radiation emission through the substrate
Creators
- 1. Lobachevsky State University of Nizhny Novgorod, Physical-Technical Research Institute (Russian Federation)
- 2. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
Description
A multiwell interband cascade laser with a tunnel junction within a single waveguide and radiation emission through the substrate is implemented for the first time. It is shown that such a laser heterostructure design provides the more efficient population of quantum wells in comparison with a conventional multiwell laser with radiation emission through the substrate, due to which the lasing threshold is significantly lowered
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 49
- Journal Issue
- 11
- Journal Page Range
- p. 1440-1442
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47039483
- Subject category
- S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- COMPARATIVE EVALUATIONS; HETEROJUNCTIONS; LASER RADIATION; QUANTUM WELLS; SEMICONDUCTOR LASERS; SUBSTRATES; TUNNEL EFFECT; WAVEGUIDES
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; EVALUATION; LASERS; NANOSTRUCTURES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SOLID STATE LASERS
Optional Information
- Copyright
- Copyright (c) 2015 Pleiades Publishing, Ltd.