Published September 2021 | Version v1
Journal article

Dual-liquid-gated electrochemical transistor and its neuromorphic behaviors

  • 1. Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh 27695 (United States)
  • 2. College of Information and Computer, Taiyuan University of Technology, Taiyuan 030024 (China)
  • 3. Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004 (China)
  • 4. School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049 (China)
  • 5. Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400 (China)
  • 6. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA (United States)

Description

Highlights: • A dual-liquid-gated OECT offers a post-fabrication and facile tuning method to tune critical electrical parameters. • Mathematical analysis was developed to demonstrate the electrochemical doping/de-doping mechanism. • Paired-pulse depression and decay time were successfully controlled by varying the auxiliary-gate bias. Organic electrochemical transistors (OECTs) are attracting great interest in the field of bioelectronics due to their low operating voltage, flexibility, and biocompatibility. Tunability of the static and transient characteristics renders OECTs with flexible electrical responses and versatile functionalities. However, existing tuning methods are known by changing the structure or composition of OECTs, which are empirical due to the lack of accurate structure-function relationships. Here, we report a post-fabrication and facile tuning method by using a dual-liquid-gate configuration. Based on this, critical parameters of OECT, e.g., threshold voltage (VTH), gate bias for the peak transconductance (VG(g*m)), electric hysteresis (Vhys), minimum of the subthreshold swing (SS*), and response time (τ), can be readily tuned over a range of 0.52 V, 0.48 V, 0.20 V, 0.38 V/decade and 7.2 ms, respectively. We have also developed corresponding mathematical analyses based on the dual-liquid-gating process. Detailed studies on the transient electrical properties demonstrate that auxiliary-gate biases influence the electrochemical doping/de-doping state of the semiconducting channel during the main-gate bias sweeping. Furthermore, typical neuromorphic behaviors of paired-pulse depression and decay time were successfully controlled by varying the auxiliary-gate bias. The proposed dual-liquid-gating is ready for precise engineering on OECT, which is beneficial as an effective tool for conducting an in-depth theoretical study on OECT, constructing multifunctional sensors, and developing more plasticizable neuromorphic devices.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nanoen.2021.106116

Additional details

Identifiers

DOI
10.1016/j.nanoen.2021.106116;
PII
S2211285521003724;

Publishing Information

Journal Title
Nano Energy (Print)
Journal Volume
87
Journal Page Range
vp.
ISSN
2211-2855

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
54014355
Subject category
S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
Descriptors DEI
ELECTRIC POTENTIAL; ELECTRICAL PROPERTIES; ELECTROCHEMISTRY; FABRICATION; FLEXIBILITY; LIQUIDS; PERFORMANCE; PULSES; SENSORS; TRANSIENTS
Descriptors DEC
CHEMISTRY; FLUIDS; MECHANICAL PROPERTIES; PHYSICAL PROPERTIES; TENSILE PROPERTIES

Optional Information

Copyright
Copyright (c) 2021 Elsevier Ltd. All rights reserved.