Published November 2001
| Version v1
Report
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Evaluation of single event effects in semiconductor devices caused by high-energy heavy ions
Creators
- 1. National Space Development Agency, Tokyo (Japan)
- 2. Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment
- 3. RYOEI Technica Corporation, Tsukuba, Ibaraki (Japan)
Description
no abstract available
Files
37001759.pdf
Files
(601.6 kB)
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Additional details
Publishing Information
- Imprint Title
- Materials science symposium 'heavy ion science in tandem energy region'
- Imprint Pagination
- 188 p.
- Journal Page Range
- p. 167-169
- Report number
- JAERI-Conf--2001-014
Conference
- Title
- Materials science symposium 'heavy ion science in tandem energy region'
- Dates
- 9-10 Jan 2001
- Place
- Tokai, Ibaraki (Japan)
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 37001759
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- EDDY CURRENTS; EVALUATION; HEAVY IONS; ION BEAMS; IRRADIATION; MOSFET; NICKEL IONS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR DEVICES
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; CURRENTS; ELECTRIC CURRENTS; FIELD EFFECT TRANSISTORS; IONS; MOS TRANSISTORS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Notes
- 1 ref., 5 figs.; This record replaces 33038062