Published 2002 | Version v1
Miscellaneous

Broadening mechanisms influencing gain spectra of 1,3-μm quantum-dot (InGa)As/GaAs lasers

  • 1. Institute of Physics, Technical University of Lodz, Lodz (Poland)

Description

no abstract available

Part of:
Abstracts of International Conference on Solid State Crystals - Materials Science and Applications

Additional details

Publishing Information

Imprint Title
Abstracts of International Conference on Solid State Crystals - Materials Science and Applications
Imprint Pagination
210 p.
Journal Page Range
p. 180

Conference

Title
International Conference on Solid State Crystals - Materials Science and Applications
Dates
14-18 Oct 2002
Place
Zakopane (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
34075369
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ARSENIDES; EMISSION SPECTRA; ENERGY LEVELS; FERMI LEVEL; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LASERS; LINE BROADENING; PHOTOLUMINESCENCE; QUANTUM MECHANICS; SUBSTRATES; THIN FILMS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; EMISSION; ENERGY LEVELS; FILMS; GALLIUM COMPOUNDS; LUMINESCENCE; MECHANICS; PHOTON EMISSION; PNICTIDES; SPECTRA

Optional Information

Notes
1 ref.