Published January 1, 2016
| Version v1
Journal article
Topmetal-II−: a direct charge sensor for high energy physics and imaging applications
Creators
- 1. Department of Physical Science and Technology, Central China Normal University, Wuhan, Hubei 430079 (China)
Description
Topmetal-II−, a direct charge sensor, was manufactured in an XFAB 350 nm CMOS process. The Topmetal-II− sensor features a 72 × 72 pixel array with an 83 μm pixel pitch which collects and measures charge directly from the surrounding media. We introduce the implementation of the circuitry in the sensor including an analogue readout channel and a column based digital readout channel. The analogue readout channel allows the access to the full waveform from each pixel through a time-shared multiplexing. The digital readout channel records hits identified by an individually settable threshold in each pixel. Some simulation and preliminary test results are also discussed
Availability note (English)
Available from http://dx.doi.org/10.1088/1748-0221/11/01/C01053Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Instrumentation
- Journal Volume
- 11
- Journal Issue
- 01
- Journal Page Range
- p. C01053
- ISSN
- 1748-0221
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47070225
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- IMAGES; IMPLEMENTATION; PITCHES; READOUT SYSTEMS; SEMICONDUCTOR DEVICES; SENSORS; SIMULATION
- Descriptors DEC
- ORGANIC COMPOUNDS; OTHER ORGANIC COMPOUNDS