Published July 22, 2010 | Version v1
Journal article Metadata-only

Crystal growth of semiconductor bulk crystals

Creators

  • 1. Research Institute for Applied Mechanics, Kyushu University, 6-1, Kasuga-Koen, Kasuga, 816-8580 (Japan)

Description

This course is aimed at showing how to grow bulk crystals by using several methods. The course involves the following points. The growth methods of Bridgman and Czochralski will be introduced. The course also focuses on the mechanism of some processes with consideration of the basic phenomenon. Experimental and numerical examples of the methods will also be introduced.

Additional details

Identifiers

DOI
10.1063/1.3476241;

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1270
Journal Issue
1
Journal Page Range
p. 93-106
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
14. international summer school on crystal growth
Dates
1-7 Aug 2010
Place
Dalian (China)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42008160
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BRIDGMAN METHOD; COMPUTERIZED SIMULATION; CRYSTAL GROWTH; CZOCHRALSKI METHOD; DISLOCATIONS; INTERACTIONS; SEMICONDUCTOR MATERIALS; SOLIDIFICATION
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; LINE DEFECTS; MATERIALS; PHASE TRANSFORMATIONS; SIMULATION

Optional Information

Notes
(c) 2010 American Institute of Physics