Published January 2025 | Version v1
Journal article

The novel broadening bandwidth method to the ε-μ-near-zero media for information manipulation and security device

  • 1. Department of Information Security, Naval University of Engineering, Wuhan 430033 (China)
  • 2. Nation Key Laboratory of Electromagnetic Effect and Security On Marine Equipment, Wuhan 430064 (China)
  • 3. Wuhan Second Ship Design and Research Institute, Wuhan 430064 (China)

Description

At present, the prepared EMNZ media based on a resonance mechanism that is very sensitive to frequency, in other words, they currently only operate at point frequency or in a very narrow frequency band, which greatly limits the applications of the EMNZ media. It can be seen that broadening the operating bandwidth of EMNZ media is an urgent problem to be solved in the design of high-performance electromagnetic devices. In the paper, a novel method for broadening the resonance bandwidth for realizing EMNZ media has been proposed based on the doped ENZ media. At first, the field distribution has been analyzed theoretically in the structure of the doped ENZ media. Then, the effective permeability of the EMNZ media realized by the structure of the doped ENZ media has been rigorously calculated with different parameters of dopants. The theoretical analysis and the simulation results show that the amount of dopants in the ENZ media is increased on the premise that the above structure is equivalent to EMNZ media, which can reduce the sensitivity of the above structure to the changing frequency, thereby broadening the operating bandwidth of the EMNZ media. (author)

Additional details

Identifiers

Publishing Information

Journal Title
Indian Journal of Physics (Online)
Journal Volume
99
Journal Issue
1
Journal Page Range
p. 205-210
ISSN
0974-9845

INIS

Country of Publication
India
Country of Input or Organization
India
INIS RN
56008124
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
BAND THEORY; CRYSTAL DOPING; DOPED MATERIALS; GRADED BAND GAPS; PERMEABILITY; SEMICONDUCTOR MATERIALS
Descriptors DEC
MATERIALS; PHYSICAL PROPERTIES