Published May 2012
| Version v1
Journal article
Long-range effect of the irradiation of silicon with light on the Schottky-barrier photovoltage
- 1. Nizhnii Novgorod State University, Physicotechnical Research Institute (Russian Federation)
Description
It is established that the Schottky-barrier photovoltage decreases as a result of the irradiation of a silicon sample with a barrier by light (incident on the base side). The value of the photovoltage is restored approximately 0.5 h after irradiation. The changes in the photovoltage after irradiation are compared to the behavior of the silicon microhardness and interpreted on the basis of the concept of point defect generation in the long-range effect.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 46
- Journal Issue
- 5
- Journal Page Range
- p. 622-624
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43129364
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ACCIDENTS; IRRADIATION; MICROHARDNESS; POINT DEFECTS; SILICON; VISIBLE RADIATION
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; HARDNESS; MECHANICAL PROPERTIES; RADIATIONS; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2012 Pleiades Publishing, Ltd.