Published December 2015
| Version v1
Journal article
Universal properties of materials with the Dirac dispersion relation of low-energy excitations
Creators
- 1. Russian Academy of Sciences, Institute for Applied Physics (Russian Federation)
- 2. Universidad del Pais Vasco, Departamento de Fisica de Materiales (Spain)
Description
The N-terminal scheme is considered for studying the contribution of edge states to the response of a two-dimensional topological insulator. A universal distribution of the nonlocal resistance between terminals is determined in the ballistic transport approach. The calculated responses are identical to experimentally observed values. The spectral properties of surface electronic states in Weyl semimetals are also studied. The density of surface states is accurately determined. The universal behavior of these characteristics is a distinctive feature of the considered Dirac materials which can be used in practical applications
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 49
- Journal Issue
- 12
- Journal Page Range
- p. 1550-1556
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47039450
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- DENSITY OF STATES; DIELECTRIC MATERIALS; DISPERSION RELATIONS; ELECTRONIC STRUCTURE; ENERGY LEVELS; EXCITATION; SEMIMETALS; SURFACES; TWO-DIMENSIONAL SYSTEMS
- Descriptors DEC
- CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELEMENTS; ENERGY-LEVEL TRANSITIONS; MATERIALS
Optional Information
- Copyright
- Copyright (c) 2015 Pleiades Publishing, Ltd.