Published December 2015 | Version v1
Journal article

Universal properties of materials with the Dirac dispersion relation of low-energy excitations

  • 1. Russian Academy of Sciences, Institute for Applied Physics (Russian Federation)
  • 2. Universidad del Pais Vasco, Departamento de Fisica de Materiales (Spain)

Description

The N-terminal scheme is considered for studying the contribution of edge states to the response of a two-dimensional topological insulator. A universal distribution of the nonlocal resistance between terminals is determined in the ballistic transport approach. The calculated responses are identical to experimentally observed values. The spectral properties of surface electronic states in Weyl semimetals are also studied. The density of surface states is accurately determined. The universal behavior of these characteristics is a distinctive feature of the considered Dirac materials which can be used in practical applications

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
49
Journal Issue
12
Journal Page Range
p. 1550-1556
ISSN
1063-7826
CODEN
SMICES

Optional Information

Copyright
Copyright (c) 2015 Pleiades Publishing, Ltd.