Published March 25, 2011 | Version v1
Journal article

Properties of uniform diameter InN nanowires obtained under Si doping

  • 1. Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
  • 2. Institute of Bio- and Nanosystems (IBN-1), Research Centre Juelich GmbH, 52425 Juelich (Germany)
  • 3. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973 (United States)

Description

High quality, well-separated, homogeneous sizes and high aspect ratio Si-doped InN nanowires (NWs) were grown by catalyst-free molecular beam epitaxy (MBE) after optimization of the growth conditions. To this end, statistical analysis of NW density and size distribution was performed. The high crystal quality and smooth NW surfaces were observed by high resolution transmission electron microscopy. Spectral photoluminescence has shown the increase of the band filling effect with Si flux, indicating successful n-type doping. A Raman LO scattering mode appears with a pronounced low energy tail, also reported for highly doped InN films.

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/22/12/125704

Additional details

Identifiers

DOI
10.1088/0957-4484/22/12/125704;
PII
S0957-4484(11)72881-1;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
22
Journal Issue
12
Journal Page Range
[5 p.]
ISSN
0957-4484