Published November 1995
| Version v1
Journal article
Charge collection efficiencies and reverse current densities of GaAs detectors
Creators
- 1. RWTH, Aachen (Germany). Physikalisches Inst.
- 2. Technische Hochschule Aachen (Germany). Lehrstuhl und Inst. fuer Halbleitertechnik
Description
GaAs surface barrier diodes with different areas have been fabricated and tested as particle detectors. It is shown that the reverse current is affected both by the area of the Schottky contact and by its circumference. The charge collection properties can be explained on the basis of a model that takes into account trapping effects and the distribution of the electric field within the detector. From this model (several) rules for optimizing GaAs detectors are derived. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Physics. B, Proceedings Supplements
- Journal Volume
- 44
- Journal Page Range
- p. 391-396.
- ISSN
- 0920-5632
- CODEN
- NPBSE7
Conference
- Title
- 4. international conference on advanced technology and particle physics.
- Dates
- 3-7 Oct 1994.
- Place
- Como (Italy).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 27019937
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALPHA DETECTION; BETA DETECTION; CHARGE COLLECTION; EFFICIENCY; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; GAMMA DETECTION; OPTIMIZATION; SCHOTTKY EFFECT; SEMICONDUCTOR DIODES; SURFACE BARRIER DETECTORS; TRAPPING
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLE DETECTION; DETECTION; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; EQUIPMENT; GALLIUM COMPOUNDS; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION DETECTION; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICES