Published 2003
| Version v1
Miscellaneous
GISAXS study of hydrogen implanted silicon
- 1. Rudjer Boskovic Institute, Zagreb (Croatia)
- 2. Sinchrotrone Trieste, Trieste (Italy)
- 3. Universita di Modena and Reggio Emilia, Modena (Italy)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of The European Materials Conference E-MRS 2003 Fall Meeting
- Imprint Pagination
- 287 p.
- Journal Page Range
- p. 85
Conference
- Title
- European Materials Conference E-MRS 2003 Fall Meeting
- Dates
- 15-19 Sep 2003
- Place
- Warsaw (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 35101101
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ANNEALING; BORN APPROXIMATION; CRYSTAL DEFECTS; DIFFUSION; HYDROGEN IONS; ION IMPLANTATION; MONOCRYSTALS; ROUGHNESS; SILICON; SMALL ANGLE SCATTERING; SYNCHROTRON RADIATION; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THICKNESS; X RADIATION
- Descriptors DEC
- BREMSSTRAHLUNG; CHARGED PARTICLES; CRYSTAL STRUCTURE; CRYSTALS; DIMENSIONS; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; IONIZING RADIATIONS; IONS; RADIATIONS; SCATTERING; SEMIMETALS; SURFACE PROPERTIES; TEMPERATURE RANGE