Published November 1972
| Version v1
Journal article
Photosensitivity spectra of InSb p-n junctions in the region of photon energies up to 3.3ev
- 1. AN SSSR, Leningrad. Fiziko-Tekhnicheskij Inst.
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Спектры фоточувствительности InSb p–n-переходов в области энергий фотонов до 3,3 эВ
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 6
- Journal Issue
- 11
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 2287-2289
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 4059729
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANTIMONY COMPOUNDS; ENERGY SPECTRA; ENERGY-LEVEL TRANSITIONS; EV RANGE 01-10; INDIUM COMPOUNDS; LOW TEMPERATURE; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHOTONS; REFLECTION; SEMICONDUCTOR JUNCTIONS; SENSITIVITY
- Descriptors DEC
- ELEMENTARY PARTICLES; ENERGY RANGE; EV RANGE; SEMICONDUCTOR MATERIALS; SPECTRA
Optional Information
- Notes
- Short communication only; for English translation see the journal Sov. Phys. - Semicond.