Published March 2006
| Version v1
Journal article
Electric field effect on the electron emission from Te-DX in Al xGa1-xAs
- 1. Laboratoire de Physique des Semiconducteurs et des Composants Electroniques, Faculte des Sciences, 5019 Monastir (Tunisia)
- 2. Ecole Preparatoire aux Academies Militaires, Avenue Marechal Tito 4029 Sousse (Tunisia)
Description
The present work is aimed to investigate the electron emission from DX centers in tellurium-doped Al xGa1-x As with aluminium composition x 0.40 using deep-level transient spectroscopy. Evidence that Te-DX exhibits an alloy splitting is shown from the temperature-dependent emission at a given reverse bias. The Poole-Frenkel effect was evoked to explain the electric field-enhanced emission. A discrepancy to this model is observed from experimental results. An attempt to explain this discrepancy as due mainly to the short-range character of the Te-DX-related potential
Additional details
Identifiers
- DOI
- 10.1016/j.msec.2005.10.002;
- PII
- S0928-4931(05)00363-2;
Publishing Information
- Journal Title
- Materials Science and Engineering. C, Biomimetic Materials, Sensors and Systems
- Journal Volume
- 26
- Journal Issue
- 2-3
- Journal Page Range
- p. 580-582
- ISSN
- 0928-4931
Conference
- Title
- 4. Maghreb-Europe meeting on materials and their applications for devices and physical, chemical and biological sensors
- Acronym
- MADICA 2004 conference
- Dates
- 29 Nov - 1 Dec 2004
- Place
- Tunis-Ghammart (Tunisia)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38007525
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM ALLOYS; ARSENIC ALLOYS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPED MATERIALS; ELECTRIC FIELDS; ELECTRON EMISSION; GALLIUM ALLOYS; TELLURIUM ALLOYS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ALLOYS; EMISSION; MATERIALS; SPECTROSCOPY
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.