Calculations of Auger intensity versus beam position for a sample with layers perpendicular to its surface
Creators
- 1. Institute of Physical Chemistry, Polish Academy of Sciences, ul. Kasprzaka 44/52, 01-224 Warsaw (Poland)
Description
Recent advances in nanotechnology are a driving force for the improvement of lateral resolution in advanced analytical techniques such as scanning electron microscopy or scanning Auger microscopy (SAM). Special samples with multilayers which are perpendicular to their surface are presently proposed for testing the lateral resolution, as discussed in recent works of Senoner et al (2004 Surf. Interface Anal. 36 1423). The relevant experiment needs a theoretical description based on recent progress in the theory. Monte Carlo simulations of electron trajectories make possible an accurate description of the considered system. We selected exemplary samples, with layers perpendicular to the surface. The layer materials are elemental solids with high, medium and low atomic numbers, i.e. Au|Cu|Au and Au|Si|Au. For these systems calculations of the Auger current versus beam position were performed. We found that, for a system with layers consisting of elements of considerably different atomic numbers, the relation can have an unexpected extreme. This observation can be important in analysis of SAM pictures.
Availability note (English)
Available from http://dx.doi.org/10.1088/0022-3727/43/27/275301Additional details
Identifiers
- DOI
- 10.1088/0022-3727/43/27/275301;
- PII
- S0022-3727(10)49741-7;
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 43
- Journal Issue
- 27
- Journal Page Range
- [7 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42059692
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- BEAM POSITION; COMPUTERIZED SIMULATION; COPPER; GOLD; LAYERS; MONTE CARLO METHOD; NANOSTRUCTURES; RESOLUTION; SCANNING ELECTRON MICROSCOPY; SILICON
- Descriptors DEC
- CALCULATION METHODS; ELECTRON MICROSCOPY; ELEMENTS; METALS; MICROSCOPY; SEMIMETALS; SIMULATION; TRANSITION ELEMENTS