Published October 2009 | Version v1
Journal article

Seamless-merging-oriented parallel inverse lithography technology

  • 1. Institute of VLSI Design, Zhejiang University, Hangzhou 310027 (China)

Description

Inverse lithography technology (ILT), a promising resolution enhancement technology (RET) used in next generations of IC manufacture, has the capability to push lithography to its limit. However, the existing methods of ILT are either time-consuming due to the large layout in a single process, or not accurate enough due to simply block merging in the parallel process. The seamless-merging-oriented parallel ILT method proposed in this paper is fast because of the parallel process; and most importantly, convergence enhancement penalty terms (CEPT) introduced in the parallel ILT optimization process take the environment into consideration as well as environmental change through target updating. This method increases the similarity of the overlapped area between guard-bands and work units, makes the merging process approach seamless and hence reduces hot-spots. The experimental results show that seamless-merging-oriented parallel ILT not only accelerates the optimization process, but also significantly improves the quality of ILT.

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/30/10/106002

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
30
Journal Issue
10
Journal Page Range
[6 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42068422
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
INTEGRATED CIRCUITS; MANUFACTURING; OPTIMIZATION
Descriptors DEC
ELECTRONIC CIRCUITS; MICROELECTRONIC CIRCUITS