Published 2002
| Version v1
Miscellaneous
Ionization energy of Zn acceptors in InP: effects of Heavy doping and compensation
Creators
- 1. Budapest Polytechnic, Kando Kalman, Faculty of Electrical Engineeting Institute of Microelectronics and Technology, Budapest (Hungary)
- 2. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest (Hungary)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of International Conference on Solid State Crystals - Materials Science and Applications
- Imprint Pagination
- 210 p.
- Journal Page Range
- p. 167
Conference
- Title
- International Conference on Solid State Crystals - Materials Science and Applications
- Dates
- 14-18 Oct 2002
- Place
- Zakopane (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 34075364
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- CHEMICAL COMPOSITION; DOPED MATERIALS; ELECTRICAL PROPERTIES; HALL EFFECT; INDIUM PHOSPHIDES; IONIZATION POTENTIAL; MATHEMATICAL MODELS; MONOCRYSTALS; ZINC ADDITIONS
- Descriptors DEC
- ALLOYS; CRYSTALS; INDIUM COMPOUNDS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; ZINC ALLOYS
Optional Information
- Contract/Grant/Project number
- HNRF (OTKA) project no. 30395
- Notes
- 7 refs