Published September 2009 | Version v1
Journal article

Epitaxial growth and characterization of CaVO3 thin films

  • 1. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA (United States)
  • 2. Department of Materials Science and Engineering, UC Berkeley, Berkeley, CA (United States)
  • 3. School of Applied Physics, Cornell University, Ithaca, NY (United States)
  • 4. Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA (United States)

Description

Epitaxial thin films of CaVO3 were synthesized on SrTiO3, LaAlO3 and (La0.27Sr0.73)(Al0.65Ta0.35)O3 substrates by pulsed laser deposition. All CaVO3 films, independent of epitaxial strain, exhibit metallic and Pauli paramagnetic behavior as CaVO3 single crystals. X-ray absorption measurements confirmed the 4+ valence state for Vanadium ions. With prolonged air exposure, an increasing amount of V3+ is detected and is attributed to oxygen loss in the near surface region of the films.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jmmm.2009.04.037

Additional details

Identifiers

DOI
10.1016/j.jmmm.2009.04.037;
PII
S0304-8853(09)00439-9;

Publishing Information

Journal Title
Journal of Magnetism and Magnetic Materials
Journal Volume
321
Journal Issue
18
Journal Page Range
p. 2852-2854
ISSN
0304-8853
CODEN
JMMMDC

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.