Published May 7, 2014 | Version v1
Journal article

Angular dependence of anisotropic magnetoresistance in magnetic systems

  • 1. Department of Physics, University of Arizona, Tucson, Arizona 85721 (United States)

Description

Anisotropic magnetoresistance (AMR), whose physical origin is attributed to the combination of spin dependent scattering and spin orbital coupling (SOC), usually displays simple angular dependence for polycrystalline ferromagnetic metals. By including generic spin dependent scattering and spin Hall (SH) terms in the Ohm's law, we explicitly show that various magneto-transport phenomena such as anomalous Hall (AH), SH, planar Hall (PH) and AMR could be quantitatively related for bulk polycrystalline ferromagnetic metals. We also discuss how AMR angular dependence is affected by the presence of interfacial SOC in magnetic layered structure

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
115
Journal Issue
17
Journal Page Range
vp.
ISSN
0021-8979
CODEN
JAPIAU

Conference

Title
55. annual conference on magnetism and magnetic materials
Dates
14-18 Nov 2010
Place
Atlanta, GA (United States)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45095179
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANGULAR DISTRIBUTION; ANISOTROPY; FERROMAGNETIC MATERIALS; INTERFACES; L-S COUPLING; MAGNETORESISTANCE; METALS; OHM LAW; POLYCRYSTALS; SCATTERING; SPIN
Descriptors DEC
ANGULAR MOMENTUM; COUPLING; CRYSTALS; DISTRIBUTION; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; INTERMEDIATE COUPLING; MAGNETIC MATERIALS; MATERIALS; PARTICLE PROPERTIES; PHYSICAL PROPERTIES

Optional Information

Notes
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