Role of structure disordering of fused silica in radiation induced defect production

Intrinsic recombinational luminescence in fused silica, mechanisms of radiation induced defect production, and the effect of initial structural imperfections are under consideration. The mechanism of self-trapped excitons lumenescence was proved by gamma-luminescence analysis. Fused quartz samples were irradiated by neutrons, gamma-rays and intensive UV radiation. Defects(E'-centres, non-bridge oxygen atoms and oxygen vacancies) are generated by subthreshold mechanism involving non-radiative decay of self-trapped excitons. The introduction of luminescent impurities such as Sm3+ and Ce3+ dereases the probability of radiation induced defect production. It has been established that structural imperfectness results in increasing of efficiency of subthreshold defect formation