Published April 30, 2008 | Version v1
Journal article

Study of the physical properties of Bi doped CdTe thin films deposited by close space vapour transport

  • 1. Escuela Superior de Fisica y Matematicas, Instituto Politecnico Nacional, 07738 Mexico, D. F. (Mexico)
  • 2. Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Instituto Politecnico Nacional, 11500 Mexico, D. F. (Mexico)
  • 3. Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain)

Description

Bi doped cadmium telluride (CdTe:Bi) thin films were grown on glass-substrates by the close space vapour transport method. CdTe:Bi crystals grown by the vertical Bridgman method, varying the nominal Bi concentration in the range between 1 x 1017 and 8 x 1018 cm-3, were used in powder form for CdTe:Bi thin film deposition. Dark conductivity and photoconductivity measurements in the 90-300 K temperature range and determination by photoacoustic spectroscopy of the optical-absorption coefficient of the films in the 1.0 to 2.4 eV spectral region were carried out. The influence of Bi doping levels upon the intergrain barrier height and other associated grain boundary parameters of the polycrystalline CdTe:Bi thin films were determined from electrical, optical and morphological characterization

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2007.06.151

Additional details

Identifiers

DOI
10.1016/j.tsf.2007.06.151;
PII
S0040-6090(07)01087-5;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
516
Journal Issue
12
Journal Page Range
p. 3818-3823
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.