Nano structuring of GaAs(100) surface using low energy ion irradiation

Nanostructuring of semi insulating GaAs (100) has been observed after irradiation of 50 keV Ar+ ion beam in a wide angular range of 0 deg. to 60 deg. with respect to surface normal. Atomic Force Microscopy (AFM) analysis shows the formation of nano dots at smaller angle of irradiation. At higher angle of irradiation, self organized ripples were developed on the surface. The rms roughness estimated from the AFM analysis shows exponential growth with angle of irradiation. In the high frequency regime, PSD analysis suggests that surface morphology of the irradiated samples is governed by the surface diffusion and mass transport dominated processes.