Plasmons in a free-standing nanorod with a two-dimensional parabolic quantum well caused by surface states
Creators
- 1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
- 2. Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)
- 3. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
Description
The collective charge density excitations in a free-standing nanorod with a two-dimensional parabolic quantum well are investigated within the framework of Bohm—Pine's random-phase approximation in the two-subband model. The new simplified analytical expressions of the Coulomb interaction matrix elements and dielectric functions are derived and numerically discussed. In addition, the electron density and temperature dependences of dispersion features are also investigated. We find that in the two-dimensional parabolic quantum well, the intrasubband upper branch is coupled with the intersubband mode, which is quite different from other quasi-one-dimensional systems like a cylindrical quantum wire with an infinite rectangular potential. In addition, we also find that higher temperature results in the intersubband mode (with an energy of 12 meV (∼ 3 THz)) becoming totally damped, which agrees well with the experimental results of Raman scattering in the literature. These interesting properties may provide useful references to the design of free-standing nanorod based devices. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-1056/21/5/057302Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics. B
- Journal Volume
- 21
- Journal Issue
- 5
- Journal Page Range
- [8 p.]
- ISSN
- 1674-1056
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45026756
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CHARGE DENSITY; DIELECTRIC MATERIALS; ELECTRON DENSITY; EXCITATION; MATRIX ELEMENTS; PLASMONS; POTENTIALS; QUANTUM WELLS; QUANTUM WIRES; RAMAN EFFECT; RANDOM PHASE APPROXIMATION; SURFACES; TEMPERATURE DEPENDENCE; TWO-DIMENSIONAL CALCULATIONS
- Descriptors DEC
- APPROXIMATIONS; CALCULATION METHODS; ENERGY-LEVEL TRANSITIONS; MATERIALS; NANOSTRUCTURES; QUASI PARTICLES