Published 1988
| Version v1
Miscellaneous
Defect formation in GaAs at silicon multicharged ion implantation
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Дефектообразование в GaAs при имплантации многозарядными ионами кремния
Publishing Information
- Imprint Title
- Summaries of reports of the 18. All-union conference on charged particle interaction with crystals
- Journal Page Range
- p. 134.
- Report number
- INIS-SU--98
Conference
- Title
- 18. All-union conference on charged particle interaction with crystals.
- Dates
- 30 May - 1 Jun 1988.
- Place
- Moscow (USSR).
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 20053850
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CRYSTAL DEFECTS; CRYSTAL-PHASE TRANSFORMATIONS; GALLIUM ARSENIDES; ION IMPLANTATION; MONOCRYSTALS; MULTICHARGED IONS; RADIATION DOSES; SILICON IONS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; CHARGED PARTICLES; CRYSTAL STRUCTURE; CRYSTALS; GALLIUM COMPOUNDS; IONS; PHASE TRANSFORMATIONS
Optional Information
- Notes
- Short note. Imprint:Tezisy dokladov 18. Vsesoyuznogo soveshchaniya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami.