Published January 10, 2007 | Version v1
Journal article

Drastic ion-implantation-induced inter-mixing during the annealing of self-assembled InAs/InP(001) quantum dots

  • 1. Regroupement Quebecois sur les Materiaux de Pointe (RQMP), Departement de genie physique, Ecole Polytechnique de Montreal, Montreal, QC, H3C 3A7 (Canada)
  • 2. Regroupement Quebecois sur les Materiaux de Pointe (RQMP), Departement de Physique, Universite de Montreal, Montreal, QC, H3C 3J7 (Canada)
  • 3. Institute for Microstructural Sciences, National Research Council, Ottawa, ON, K1A 0R6 (Canada)

Description

This work examines the influence of post-growth phosphorus implantation followed by rapid thermal annealing on the photoluminescence (PL) emission from self-assembled InAs/InP(001) quantum dots (QDs). Upon annealing, the spectra reveal an atypical evolution, showing an increase in the emission bandwidth and the rise of a InAsP quantum-well-like peak. The overall emission exhibit a blueshift whose magnitude increases with annealing temperature and fluence up to ∼325 meV. The temperature threshold for a detectable PL shift, 400 deg. C, is considerably lower than the 725 deg. C value for unimplanted samples, thereby demonstrating the potential of ion-implantation-induced intermixing for spatially selective band gap tuning of InAs/InP QDs

Additional details

Identifiers

DOI
10.1088/0957-4484/18/1/015404;
PII
S0957-4484(07)32379-9;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
18
Journal Issue
1
Journal Page Range
p. 015404
ISSN
0957-4484