Morphological and crystalline characterization of pulsed laser deposited pentacene thin films for organic transistor applications
Creators
- 1. Univ. Lyon, Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, F-69622 Villeurbanne (France)
- 2. Université Bordeaux, ISM, UMR 5255, F-33400 Talence (France)
- 3. CNRS, ISM, UMR 5255, F-33400 Talence (France)
- 4. Université de Limoges, CNRS, ENSCI, UMR 7315, F-87000 Limoges (France)
- 5. Aix-Marseille Univ, CNRS UMR 7341, LP3, Marseille (France)
- 6. Aix-Marseille Univ, CNRS UMR 7325, CINaM, Marseille (France)
- 7. Institut des Nanotechnologies de Lyon – Université de Lyon, UMR 5270 – CNRS, Ecole Centrale de Lyon, F-69134 Ecully Cedex (France)
Description
Highlights: • Pulsed laser deposition of pentacene thin films without chemical degradation of the molecules. • Correlation between deposition parameters and orientation of pentacene molecules in ordered or disordered phase. • The resulting phase turns out to be dependent of the underlying layer. - Abstract: We show that high-quality pentacene (P5) thin films of high crystallinity and low surface roughness can be produced by pulsed laser deposition (PLD) without inducing chemical degradation of the molecules. By using Raman spectroscopy and X-ray diffraction measurements, we also demonstrate that the deposition of P5 on Au layers result in highly disordered P5 thin films. While the P5 molecules arrange within the well-documented 1.54-nm thin-film phase on high-purity fused silica substrates, this ordering is indeed destroyed upon introducing an Au interlayer. This observation may be one explanation for the low electrical performances measured in P5-based organic thin film transistors (OTFTs) deposited by laser-induced forward transfer (LIFT).
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2017.01.281Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2017.01.281;
- PII
- S0169-4332(17)30305-7;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 418
- Journal Issue
- Part B
- Journal Page Range
- p. 446-451
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- European Materials Research Society spring meeting 2016 symposium C on laser-material interactions for tailoring future applications
- Dates
- 2-6 May 2016
- Place
- Lille (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49064313
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ENERGY BEAM DEPOSITION; GOLD; LASER RADIATION; LASERS; LAYERS; MOLECULES; PENTACENE; PULSED IRRADIATION; RAMAN SPECTROSCOPY; ROUGHNESS; SILICA; SUBSTRATES; SURFACES; THIN FILMS; TRANSISTORS; X-RAY DIFFRACTION
- Descriptors DEC
- AROMATICS; COHERENT SCATTERING; DEPOSITION; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELEMENTS; FILMS; HYDROCARBONS; IRRADIATION; LASER SPECTROSCOPY; METALS; MINERALS; ORGANIC COMPOUNDS; OXIDE MINERALS; POLYCYCLIC AROMATIC HYDROCARBONS; RADIATIONS; SCATTERING; SEMICONDUCTOR DEVICES; SPECTROSCOPY; SURFACE COATING; SURFACE PROPERTIES; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.