Published 1976
| Version v1
Report
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Study of the transport phenomena in some semiconducting materials by the time-of-flight method
Description
The study of the collection of the charges generated by a radiation in a PIN structure allows the determination of the transport properties of the electrons and of the holes in a same crystal. This technique allowed to measure the dependence of the velocity on the temperature and electrical field and to characterize the traps in the materials used to prepare nuclear radiation detectors: lithium drifted germanium, high-purity germanium, cadmium telluride and mercuric iodide
Availability note (English)
MF available from INIS under the Report Number.Abstract (French)
L'etude de la collection des charges creees par un rayonnement dans une structure du type PIN, permet de determiner les parametres de transport des electrons et des trous dans un meme cristal. Cette technique a permis de mesurer la variation de la vitesse des porteurs avec le champ electrique et la temperature, et de caracteriser les centres de capture dans les materiaux destines a la fabrication de detecteurs nucleaires: germanium compense au lithium, germanium ultra pur, tellurure de cadmium et iodure mercuriqueFiles
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Additional details
Additional titles
- Original title (French)
- Etude des proprietes de transport de quelques materiaux semiconducteurs par la methode du temps de vol
Publishing Information
- Imprint Pagination
- 165 p.
- Report number
- CRN-PN--76-18
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 7269292
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Thesis
- Descriptors DEI
- CADMIUM TELLURIDES; CARRIER MOBILITY; CDTE SEMICONDUCTOR DETECTORS; CHARGE TRANSPORT; ELECTRIC FIELDS; GAMMA DETECTION; GERMANIUM; HGI2 SEMICONDUCTOR DETECTORS; HIGH-PURITY GE DETECTORS; LI-DRIFTED GE DETECTORS; MERCURY IODIDES; RECOMBINATION; TIME-OF-FLIGHT METHOD; TRAPPING
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; ELEMENTS; GE SEMICONDUCTOR DETECTORS; HALIDES; HALOGEN COMPOUNDS; IODIDES; IODINE COMPOUNDS; LI-DRIFTED DETECTORS; MEASURING INSTRUMENTS; MERCURY COMPOUNDS; METALS; MOBILITY; RADIATION DETECTION; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; TELLURIDES; TELLURIUM COMPOUNDS