Published September 28, 2018 | Version v1
Journal article

CVD-grown MoSe2 with high modulation depth for ultrafast mode-locked erbium-doped fiber laser

  • 1. State Key Laboratory of Information Photonics and Optical Communications, School of Science, P. O. Box 122, Beijing University of Posts and Telecommunications, Beijing 100876 (China)
  • 2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

Description

Two-dimensional materials have been widely used as optical modulator materials in mode-locked fiber lasers. In terms of the performance of the fiber laser, one with an ultrashort pulse and high stability has great commercial value. Herein, the MoSe2 grown by the chemical vapor deposition (CVD) method with high modulation depth, quality lattice structure and uniformity is successfully applied in a mode-locked erbium-doped fiber laser. The pulse duration and signal-to-noise ratio of the laser are 207 fs and 85 dB, respectively. The multifarious performance comparisons indicate that the CVD-based MoSe2 saturable absorber with the tapered fiber structure has unique advantages not only in the generation of ultrashort pulses, but also in the optimization of laser stability. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6528/aad0b3

Additional details

Identifiers

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
29
Journal Issue
39
Journal Page Range
[6 p.]
ISSN
0957-4484