Properties of ITO films on glass fabricated by pulsed laser deposition
Description
Transparent conducting indium tin oxide (ITO) on glass was fabricated by pulsed laser deposition using a Nd:YAG laser with a wavelength of 355 nm. ITO films were grown on glass substrate at various substrate temperatures (room temperature ∼500 deg. C) and at different oxygen pressures (0-100 mTorr). Under an oxygen pressure of 20 mTorr, the lowest resistivity of 9.5567x10-5 Ω cm was obtained for ITO films deposited at 500 deg. C. The optical and electrical properties of ITO films on glass are found to be dependent on the oxygen pressure and substrate temperature. The resistivity was decreased with an increase of substrate temperature owing to crystallinity, boundary scattering, and oxygen vacancies. The transmittance for the ITO films was about 80% at oxygen pressure over 20 mTorr. A four-point probe method, X-ray diffraction (XRD), atomic force microscopy (AFM), and UV-visible spectrometry are used to investigate the electrical, structural, and optical properties of ITO films
Additional details
Identifiers
- DOI
- 10.1016/S0921-5107;
- PII
- S0921510702006256;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 102
- Journal Issue
- 1-3
- Journal Page Range
- p. 376-379
- ISSN
- 0921-5107
- CODEN
- MSBTEK
Conference
- Title
- Advanced characterisation of semiconductors
- Acronym
- E-MRS 2002 Symposium E
- Dates
- 18-21 Jun 2002
- Place
- Strasbourg (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37044495
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION SPECTROSCOPY; ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; ENERGY BEAM DEPOSITION; FILMS; GLASS; INDIUM COMPOUNDS; LASER RADIATION; OPTICAL PROPERTIES; OXYGEN; PRESSURE DEPENDENCE; PULSED IRRADIATION; SUBSTRATES; TEMPERATURE DEPENDENCE; TIN OXIDES; VACANCIES; WAVELENGTHS; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DEPOSITION; DIFFRACTION; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; IRRADIATION; MICROSCOPY; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; POINT DEFECTS; RADIATIONS; SCATTERING; SPECTROSCOPY; SURFACE COATING; TIN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2002 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.