Published September 15, 2003 | Version v1
Journal article

Properties of ITO films on glass fabricated by pulsed laser deposition

Description

Transparent conducting indium tin oxide (ITO) on glass was fabricated by pulsed laser deposition using a Nd:YAG laser with a wavelength of 355 nm. ITO films were grown on glass substrate at various substrate temperatures (room temperature ∼500 deg. C) and at different oxygen pressures (0-100 mTorr). Under an oxygen pressure of 20 mTorr, the lowest resistivity of 9.5567x10-5 Ω cm was obtained for ITO films deposited at 500 deg. C. The optical and electrical properties of ITO films on glass are found to be dependent on the oxygen pressure and substrate temperature. The resistivity was decreased with an increase of substrate temperature owing to crystallinity, boundary scattering, and oxygen vacancies. The transmittance for the ITO films was about 80% at oxygen pressure over 20 mTorr. A four-point probe method, X-ray diffraction (XRD), atomic force microscopy (AFM), and UV-visible spectrometry are used to investigate the electrical, structural, and optical properties of ITO films

Additional details

Identifiers

DOI
10.1016/S0921-5107;
PII
S0921510702006256;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
102
Journal Issue
1-3
Journal Page Range
p. 376-379
ISSN
0921-5107
CODEN
MSBTEK

Conference

Title
Advanced characterisation of semiconductors
Acronym
E-MRS 2002 Symposium E
Dates
18-21 Jun 2002
Place
Strasbourg (France)

Optional Information

Copyright
Copyright (c) 2002 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.