Effects of electrically inactive ion implantation in GaAs1/sub -//sub x/P/sub x/ (xapprox. =0.38) on photoluminescence intensity

The effects of electrically inactive ion implantation in n-type GaAs/sub 1-x/P/sub x/ (xapprox. =0.38) on photoluminescence intensity have been studied. Improvement of the photoluminescence efficiency for the near-band-gap transition was achieved by a group-III element (B and Ga) ion implantation at 1013 cm-2. Group-V element (As) ion implantation led to deterioration of the efficiency to the same degree or more than group-VIII element (Ar) ion implantation. The results suggest that the efficiency improvement is attributed to a decrease in the concentration of the ''killer'' center, probably associated with the Ga vacancy included in the as-grown GaAsP crystals