Published 1990
| Version v1
Miscellaneous
TiN use as diffusion barrier between Mo, Co, Pd and Ni thin films and monocrystalline silicon
Creators
- 1. Universidade Federal, Rio de Janeiro, RJ (Brazil). Coordenacao dos Programas de Pos-graduacao de Engenharia
Description
Published in summary form only
Availability note (English)
Available from the Library of Comissao Nacional de Energia Nuclear, RJ, Brazil.Additional details
Additional titles
- Original title (Portuguese)
- Utilizacao de TiN comno barreira de difusao entre filmes finos de Mo, Co, Pd e Ni e silicio monocristalino
Publishing Information
- Imprint Title
- Proceedings of the 13. National Meeting on Condensed Matter Physics
- Imprint Pagination
- 284 p.
- Journal Page Range
- p. 256.
Conference
- Title
- 13. National Meeting on Condensed Matter Physics.
- Dates
- 8-12 May 1990.
- Place
- Caxambu, MG (Brazil).
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 22039765
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract, Non-conventional Literature
- Descriptors DEI
- COBALT; DIFFUSION BARRIERS; MOLYBDENUM; NICKEL; NITROGEN; PRASEODYMIUM; SILICON; TITANIUM COMPOUNDS
- Descriptors DEC
- ELEMENTS; METALS; NONMETALS; RARE EARTHS; SEMIMETALS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Notes
- Imprint:Anais do 13. Encontro Nacional de Fisica da Materia Condensada.