Published December 2018 | Version v1
Journal article Metadata-only

Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

Creators

  • 1. Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences (Russian Federation)
  • 2. National Research Nuclear University "MEPhI" (Russian Federation)

Description

The longitudinal ρxx and Hall ρxy resistances were measured in the region of the quantum phase transitions for the quantum Hall effect regime with magnetic fields up to 12 T at temperatures of T = 0.4–30 K in two-dimensional electron systems n-In0.9Ga0.1As/In0.81Al0.19As. The nonuniversal scaling behavior of the temperature dependence of the width of the resistance ρxx peaks related to the effect of the large-scale random potential and of Landau-level mixing with opposite spin directions was found.

Additional details

Identifiers

DOI
10.1134/S1063782618120102;

Publishing Information

Journal Title
Semiconductors
Journal Volume
52
Journal Issue
12
Journal Page Range
p. 1551-1558
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
49100697
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
GALLIUM ARSENIDES; HALL EFFECT; HIGH ROOMS; INDIUM ARSENIDES; MAGNETIC FIELDS; PEAKS; PHASE TRANSFORMATIONS; TEMPERATURE DEPENDENCE; TWO-DIMENSIONAL CALCULATIONS; TWO-DIMENSIONAL SYSTEMS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL LATTICES; CRYSTAL STRUCTURE; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; PNICTIDES

Optional Information

Copyright
Copyright (c) 2018 Pleiades Publishing, Ltd.