Published 1985
| Version v1
Book
Solid-phase epitaxial regrowth of fine-grain polycrystalline silicon
- 1. Fom-Institute for Atomic and Molecular Physics, Amsterdam (Netherlands)
- 2. Cornell Univ., Ithaca, (U.S.A.)
Description
Fine-grain polycrystalline silicon has been produced by low-energy pulsed-laser irradiation of copper-implanted amorphous silicon. This fine-grained material can be regrown epitaxially on the (100) substrate using thermal annealing at temperatures ranging from 6000C to 10000C
Additional details
Publishing Information
- Publisher
- Editions de la Physique.
- Imprint Place
- Les Ulis (France)
- ISBN
- 2-86883-010-2
- Imprint Title
- Energy beam-solid interactions and transient thermal processing
- Imprint Pagination
- 558 p.
- Journal Page Range
- p. 217-221.
Conference
- Title
- Annual conference of the Materials Research Society.
- Dates
- 13-15 May 1985.
- Place
- Strasbourg (France).
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 18077702
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CHANNELING; COPPER IONS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; EPITAXY; HIGH TEMPERATURE; ION IMPLANTATION; LASER RADIATION; PHYSICAL RADIATION EFFECTS; QUANTITY RATIO; SILICON
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; IONS; RADIATION EFFECTS; RADIATIONS; SEMIMETALS