Channeling and optical measurements of high current density arsenic implanted solicon

High density implants produce damage and at the same time annealing effects. Silicon crystals implanted with 10 μA/cm2-100 keV As + at doses of 1014-1015-1016/cm2 were analyzed by channeling effect technique and reflectivity in the infrared region where plasma resonance takes place. The comparison between the two techniques has been also extended to laser annealed samples. The effective mass and the relaxation time for electron scattering depend on active dopant concentration and on the disorder. Their dependence as a function of doses, implant and annealing conditions is reported