Metal--Insulator Transition in Mott--Hubbard System FeSi

Following to the comprehensive study of a steady magnetic field dc- and ac-transport and magnetization in the almost magnetic narrow-gap semiconductor FeSi the galvanomagnetic measurements have been carried out in pulsed magnetic fields up to 50 T. It was shown from the analysis of the experimental data obtained on high quality single crystals of iron monosilicide that the Mott--Hubbard scenario of metal-insulator transition with on-site Coulomb interaction U∼3D (D-is the band half-width) provides the most adequate description of the low temperature anomalies in this model system. From this point of view the pulsed field magnetoresistance and Hall coefficient anomalies may be also interpreted in terms of a MIT in a strong magnetic field. (author)