Published January 1978 | Version v1
Journal article Metadata-only

Channeling and RHEED analyses of Pb-implantation in silicon

Creators

  • 1. Catania Univ. (Italy). Istituto di Struttura della Materia
  • 2. Rome Univ. (Italy). Istituto di Fisica

Description

Si <111> single crystals implanted with 40 keV Pb+ have been analyzed by channeling and reflection high-energy electron diffraction (RHEED) techniques. A suitable use of both techniques gives information on the thickness of the damaged regions. In particular, 60 KV electron impinging at approximately 0.30 and 10 with respect to the crystal surface give information on 40 A and 100 A thick Si layers, respectively. The low dose implanted region grows epitaxially onto the underlaying Si single crystal substrate. High dose implantation will not allow recrystallization for annealing temperatures up to 9000. (orig.)

Abstract (German)

Si <111> Einkristalle implantiert mit 40 keV Pb+ wurden mit Hilfe von Kanalisierungs- und Reflexions-Hochenergieelektronenbeugungs- (RHEED) Techniken untersucht. Durch geeignete Verwendung beider Techniken erhaelt man Informationen ueber die Dicke der Schadensbereiche. Insbesondere geben 60 KV-Elektronen, die bei ca. 0,30 und 10 auf die Kristalloberflaeche auftreffen, Informationen ueber 40 A- und 100 A-dicke Si-Schichten. Der implantierte Niederdosisbereich waechst epitaxial in das darunterliegende Substrat des Si-Einkristalls. Hochdosisimplantierungen fuehren fuer Ausgluehtemperaturen bis zu 9000C nicht zur Rekristallisation. (orig.)

Additional details

Identifiers

DOI
10.1007/bf00928215;

Publishing Information

Journal Title
Applied Physics
Journal Volume
15
Journal Issue
2
Series
Appl. Phys.
Journal Page Range
233-237
ISSN
0340-3793

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
9390137
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
BACKSCATTERING; DOPED MATERIALS; ELECTRON DIFFRACTION; HELIUM 4 BEAMS; ION CHANNELING; ION IMPLANTATION; LAYERS; LEAD ADDITIONS; MEV RANGE 01-10; MONOCRYSTALS; PHYSICAL RADIATION EFFECTS; SILICON; SURFACES
Descriptors DEC
BEAMS; CHANNELING; COHERENT SCATTERING; CRYSTALS; DIFFRACTION; ELEMENTS; ENERGY RANGE; ION BEAMS; MEV RANGE; RADIATION EFFECTS; SCATTERING; SEMIMETALS

Optional Information

Notes
4 figs.; 9 refs.; Updated automatically by Metadata and Full-Text Enrichment Agent