Published March 1976
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Stacking sequence periodicites in silicon carbide
Description
Direct lattice imaging by transmission electron microscopy and optical diffraction were combined to study the stacking sequences in fine-grained (<1 μm), hot-pressed SiC. Stacking periodicities of 5, 6, 7, 8, 24, 36, and 48 composite Si-C layers were recognized
Availability note (English)
MF available from INIS under the Report Number.Files
8283371.pdf
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Additional details
Publishing Information
- Imprint Pagination
- 5 p.
- Report number
- LBL--4961
Conference
- Title
- 6. European Congress on electron microscopy.
- Dates
- 14 Sep 1976.
- Place
- Jerusalem, Israel.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 8283371
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL LATTICES; DIFFRACTION; ELECTRON MICROSCOPY; IMAGES; LAYERS; SILICON CARBIDES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; COHERENT SCATTERING; CRYSTAL STRUCTURE; MICROSCOPY; SCATTERING; SILICON COMPOUNDS
Optional Information
- Notes
- Available from NTIS. $3.50.
- Secondary number(s)
- CONF-760928--1.