Published December 12, 1993 | Version v1
Journal article Metadata-only

Study of strain heterogeneity in In1-xGaxP/(111)GaAs epitaxial structure

Creators

  • 1. Kabardino-Balkarskij Gosudarstvennyj Univ., Nal'chik (Russian Federation)

Description

The paper presents the results of X-ray diffraction analysis of deformation profiles ε(z) in the depth at various points on the surface of heteroepitaxial structure In1-xGaxP/(111)GaAs. Alternation of the composition in the process of heterolayer growth results in a depth deformation gradient which causes changes in electrophysical properties of semiconductor devices. Efficiency of the applied methods is discussed. 5 refs., 2 figs

Additional details

Additional titles

Original title (Russian)
Исследование поверхностной неоднородности деформации в эпитаксиальной структуре Ин

Publishing Information

Journal Title
Pis'ma v Zhurnal Tekhnicheskoj Fiziki
Journal Volume
19
Journal Issue
23
Journal Page Range
p. 74-78.
ISSN
0320-0116
CODEN
PZTFDD

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
25043505
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CHEMICAL COMPOSITION; EPITAXY; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; SEMICONDUCTOR JUNCTIONS; STRAINS; X-RAY DIFFRACTION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SCATTERING