Published December 1981 | Version v1
Journal article

Interfacial tension in melts-solutions of InAs-In(As) and GaAs-Ga(As) binary systems

  • 1. Gosudarstvennyj Nauchno-Issledovatel'skij i Proektnyj Inst. Redkometallicheskoj Promyshlennosti, Moscow (USSR)

Description

Temperature dependence of surface tension in indium and gallium melts is studied by the method of ''lying'' drop weight up to tempera=. tures of 942 and 1238 deg C respectively. Interfacial tension in melts- solutions of InAs-In(As) and GaAs-Ga(As) binary systems are studied in contact with B2O3 at 942 and 1238 deg C, respectively. In and Ga are shown to be surface-inactive and As-surface active components. It is established that interfacial tension of studied systems has negative deviation from ideal

Additional details

Additional titles

Original title (Russian)
Межфазное натяжение расплавов-растворов бинарных систем InAs-Ин(Ас) и GaAs-Га(Ас)

Publishing Information

Journal Title
Izv. Akad. Nauk SSSR, Neorg. Mater.
Journal Volume
17
Journal Issue
12
Series
Izv. Akad. Nauk SSSR, Neorg. Mater.
Journal Page Range
2126-2129
ISSN
0002-337X

Optional Information

Notes
For English translation see the journal Inorganic Materials (USA).